Methods of fabricating silicon carbide metal-semiconductor...

Details Methods of fabricating silicon carbide metal-semiconductor... Methods of fabricating silicon carbide metal-semiconductor...

2006-06-27

2006-06-27

Tran, Minhloan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S172000, C438S571000

Reexamination Certificate

active

07067361

ABSTRACT:
SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two recess gate structure. MESFETS with a selectively doped p-type buffer layer are also provided. Utilization of such a buffer layer may reduce output conductance by a factor of 3 and produce a 3 db increase in power gain over SiC MESFETs with conventional p-type buffer layers. A ground contact may also be provided to the p-type buffer layer and the p-type buffer layer may be made of two p-type layers with the layer formed on the substrate having a higher dopant concentration. SiC MESFETs according to embodiments of the present invention may also utilize chromium as a Schottky gate material. Furthermore, an oxide-nitride-oxide (ONO) passivation layer may be utilized to reduce surface effects in SiC MESFETs. Also, source and drain ohmic contacts may be formed directly on the n-type channel layer, thus, the n+regions need not be fabricated and the steps associated with such fabrication may be eliminated from the fabrication process. Methods of fabricating such SiC MESFETs and gate structures for SiC FETs as well as passivation layers are also disclosed.

REFERENCES:
patent: 3903592 (1975-09-01), Heckl
patent: 4732871 (1988-03-01), Buchmann et al.
patent: 4737469 (1988-04-01), Stevens
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4803526 (1989-02-01), Terada et al.
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 4947218 (1990-08-01), Edmond et al.
patent: 5229625 (1993-07-01), Suzuki et al.
patent: 5264713 (1993-11-01), Palmour
patent: 5270554 (1993-12-01), Palmour
patent: 5289015 (1994-02-01), Chirovsky et al.
patent: 5300795 (1994-04-01), Saunier et al.
patent: 5306650 (1994-04-01), O'Mara et al.
patent: 5396085 (1995-03-01), Baliga
patent: 5399883 (1995-03-01), Baliga
patent: 5510630 (1996-04-01), Agarwaa et al.
patent: 5686737 (1997-11-01), Allen
patent: 5719409 (1998-02-01), Singh et al.
patent: 5742082 (1998-04-01), Tehrani et al.
patent: 5869856 (1999-02-01), Kasahara
patent: 5891769 (1999-04-01), Liaw et al.
patent: 5895939 (1999-04-01), Ueno
patent: 5900648 (1999-05-01), Harris et al.
patent: 5925895 (1999-07-01), Sriram et al.
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 6107649 (2000-08-01), Zhao
patent: 6121633 (2000-09-01), Singh et al.
patent: 6218680 (2001-04-01), Carter, Jr. et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 2003/0017660 (2003-01-01), Li
patent: 2003/0075719 (2003-04-01), Sriram
patent: 2004/0041079 (2004-03-01), Brown
patent: 2004/0099888 (2004-05-01), Sriram
patent: 2005/0023535 (2005-02-01), Sriram
patent: 0518683 (1992-12-01), None
patent: 19900169 (1999-07-01), None
patent: 47-5124 (1972-03-01), None
patent: 54-155482 (1979-10-01), None
patent: 59-134874 (1984-08-01), None
patent: 60-142568 (1985-02-01), None
patent: 60-154674 (1985-08-01), None
patent: 360189250 (1985-09-01), None
patent: 63047983 (1988-02-01), None
patent: 01059961 (1989-03-01), None
patent: 1106476 (1989-04-01), None
patent: 1106477 (1989-04-01), None
patent: 1-196873 (1989-08-01), None
patent: 1308876 (1989-12-01), None
patent: 2-10772 (1990-01-01), None
patent: 404225534 (1992-08-01), None
patent: 8-316164 (1996-11-01), None
patent: 9-36359 (1997-02-01), None
patent: 411150124 (1999-06-01), None
patent: WO 98/19342 (1998-05-01), None
patent: WO 01/67521 (2001-09-01), None
patent: WO 01/86727 (2001-11-01), None
patent: WO 01/86727 (2001-11-01), None
“A 10 W 2 GHz Silicon Carbide MESFET,”Microwave Journal. (Sep. 1999).
“First Silicon Carbide Microwave Power Products are Introduced,”Applied Microwave&Wireless.
“SiC MESFET Drives PCS Base Stations,”Wireless Systems Design. (Oct. 1999).
Allen, et al. “Silicon Carbide MESFET's with 2 w/mm and 50% P.A.E. at 1.8 GHz,”MTT Conference. 1996.
Browne, Editorial:The Power and the Glory, Microwaves & RF. Jul. 1999, p. 17.
Browne, Jack. “Top Products of 1999,”Microwaves&RF. (Dec. 1999).
Browne,SiC MESFET Delivers 10-W Power at 2 GHZ, Microwaves & RF. Oct. 1999, pp. 138-139.
Carter et al.,Silicon Carbide and Related Materials, 1999,Part 2, Materials Science Forum, vols. 338-342, pp. 1247-1266 (2000).
Evwaraye et al.,Examination of electrical and optical properties of vanadium in bulk n-type silicon carbide, J. Appl. Phys. 76 (10), 1994.
Heftman, Gene, “Wireless Semi Technology Heads Into New Territory,”Microwaves&RF. (Feb. 2000).
Hilton et al.,Suppression of Instabilities in 4H-SiC Microwave MESFETs, 2000 8thIEEE International Symposium.
Hilton et al.,Surface Induced Instabilities in 4H-SiC Microwave MESFETs, Materials Science Forum, vols. 338-342, 2000, pp. 1251-1254.
Jonsson et al.,Physical Simulations on the Operations of 4H-SiC Microwave Power Transistors, Materials Science Forum, vols. 338-342, 2000, pp. 1263-1266.
Kelner, et al. “β -SiC MESFET's and Buried-Gate JFETs,”IEEE Electron Device Letters. vol. EDL-8, No. 9, (Sep. 1987).
Kong, et al. “Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β -SiC grown via chemical vapor deposition,”Applied Physics Letters. vol. 5i, No. 5, (Aug. 10, 1987).
Konstantinov et al.,Investigation of Lo-Hi-Lo and Delta-Doped Silicon Carbide Structures, Mat. Res. Soc. Symp. Proc., vol. 640, 2001, pp. H2.4.1-H2.4.6.
Ma, et al.,High Efficiency LDMOS Power FET for Low Voltage Wireless Communications, 1996 IEEE.
Nilsson et al.,Characterization of SiC MESFETs on Conducting Substrates, Materials Science Forum, vols. 338-342, 2000, pp. 1255-1258.
Noblanc et al.,Power Density Comparison Between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer, Materials Science Forum, vols. 338-342, 2000, pp. 1247-1250.
Palmour, et al. “Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β -SiC thin films,”Journal of Applied Physics. vol. 64, No. 4, (Aug. 15, 1988).
Palmour, et al. “High temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films,”Applied Physics Letters. vol. 51, No. 24, (Dec. 14, 1987).
Palmour, et al. “Ultrafast silicon-carbide rectifiers,”Powertechnics Magazine. (Aug. 1989).
Rorsman et al.,Fabrication, Characterization and Modeling of SiC MESFETs, Materials Science Forum, vol. 338-342, 2000, pp. 12-59-1262.
Soares, Robert.GaAs MESFET Circuit Design. pp. 7-9; 17-18, (1988).
Sriram, Saptharishi, U.S. Appl. No. 10/165,672, filed Oct. 24, 2001.
Sze, S.M.,Physics of Semiconductor Devices. Chapter 6.4, pp. 341-347, (Date illegible).
Yokogawa et al.,Electronic Properties of Nitrogen Delta-Doped Silicon Carbide Layers, Mat. Res. Soc. Symp. Proc., vol. 640, 2001, pp. H2.5.1-H2.5.6.
International Search Report of PCT/US 01/04957 filed Feb. 15, 2001.
International Search Report of PCT/US 02/32204 filed Feb. 26, 2003.

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