Methods of fabricating silicide layers and silicide contact stru

Details Methods of fabricating silicide layers and silicide contact stru Methods of fabricating silicide layers and silicide contact stru

1998-01-22

2000-09-26

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438682, H01L 214763

Patent

active

061242020

ABSTRACT:
A silicide layer is formed on a conductive layer in a microelectronic device by forming a first silicide layer on the conductive layer. A second silicide layer is then formed on the first silicide layer, the second silicide layer having a concentration of silicon that is less than the first silicide layer. Preferably, the first silicide layer and the second silicide layer are formed of tungsten silicide. The first silicide layer and the second silicide layer are preferably annealed to form a merged silicide layer. According to another aspect, a contact structure for contacting a microelectronic layer in a microelectronic device is formed by forming an insulation layer on the microelectronic layer, the insulation layer having a contact hole therethrough that exposes a portion of the microelectronic layer. A conductive layer is then formed on the insulation layer, the conductive layer extending through the contact hole to contact the exposed portion of the microelectronic layer. A first silicide layer is then formed on the conductive layer. A second silicide layer is formed on the first silicide layer, the second silicide layer having a lower concentration of silicon than the first silicide layer. A second insulation layer may then be formed on the second silicide layer, and the first silicide layer and the second silicide layer may be annealed to form a merged silicide layer.

REFERENCES:
patent: 4629635 (1986-12-01), Brors
patent: 5231056 (1993-07-01), Sandhu
patent: 5635765 (1997-06-01), Larson
Notice of Office Action, Korean Application No. 10-1997-0016814, Jul. 27, 1999.

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