Methods of fabricating semiconductor structures having...

Details Methods of fabricating semiconductor structures having... Methods of fabricating semiconductor structures having...

2006-10-17

2006-10-17

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S504000, C438S505000, C257SE21430, C257SE21131, C257SE21171, C257SE21438

Reexamination Certificate

active

07122449

ABSTRACT:
Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression of faceting during selective epitaxial growth by in situ doping of the epitaxial layer at a predetermined level rather than by manipulating spacer composition and geometry alleviates the stringent requirements on the device design and increases tolerance to variability during the spacer fabrication.

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