Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2007-09-04
2007-09-04
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
Reexamination Certificate
active
10972972
ABSTRACT:
An SOI substrate is fabricated by providing a substrate having a sacrificial layer thereon, an active semiconductor layer on the sacrificial layer remote from the substrate and a supporting layer that extends along at least two sides of the active semiconductor layer and the sacrificial layer and onto the substrate, and that exposes at least one side of the sacrificial layer. At least some of the sacrificial layer is etched through the at least one side thereof that is exposed by the supporting layer to form a void space between the substrate and the active semiconductor layer, such that the active semiconductor layer is supported in spaced-apart relation from the substrate by the supporting layer. The void space may be at least partially filled with an insulator lining.
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Korean Office Action, KR 10-2003-0085237, Aug. 31, 2005.
Choe Jeong-Dong
Lee Sung-Young
Oh Chang-Woo
Park Dong-Gun
Booth Richard A.
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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