Methods of fabricating semiconductor devices having salicide

Details Methods of fabricating semiconductor devices having salicide Methods of fabricating semiconductor devices having salicide

2006-02-21

2006-02-21

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S595000, C438S683000, C438S685000, C438S686000, C438S745000, C438S778000

Reexamination Certificate

active

07001842

ABSTRACT:
Methods for fabricating a semiconductor device with salicide are disclosed. One example method includes forming a gate electrode structure having a gate oxide film, a gate electrode, and a protection film stacked on a substrate in succession, and gate spacers on sidewalls of the stack of the gate oxide film, the gate electrode, and the protection film; forming an insulating film on an entire surface of the substrate, the insulating film exposing upper portions of the gate electrode and the gate spacers; and removing portions of the protection film and the gate spacers, to expose an upper portion of the gate electrode. The example method may also include applying a salicide forming metal on an entire surface of the substrate; and performing a heat treatment process to form salicide on the gate electrode and the gate spacers, selectively.

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