Methods of fabricating semiconductor devices having resistors

Details Methods of fabricating semiconductor devices having resistors Methods of fabricating semiconductor devices having resistors

2011-01-18

2011-01-18

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S238000, C438S383000, C438S384000, C257S350000, C257S363000, C257SE21004

Reexamination Certificate

active

07871890

ABSTRACT:
A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower interlayer insulating layer in the first circuit region and a second hole passing through the lower interlayer insulating layer in the second circuit region are provided. A first semiconductor pattern and a second semiconductor pattern are sequentially stacked in the first hole. A first resistor having the same crystalline structure as the second semiconductor pattern is provided in the second hole.

REFERENCES:
patent: 5340754 (1994-08-01), Witek et al.
patent: 6172389 (2001-01-01), Sakoh
patent: 2001/0034106 (2001-10-01), Moise et al.
patent: 2002/0031916 (2002-03-01), Ohkubo et al.
patent: 2002/0177292 (2002-11-01), Dennison
patent: 2006/0186483 (2006-08-01), Cho et al.
patent: 2006/0237756 (2006-10-01), Park et al.
patent: 2006/0284237 (2006-12-01), Park et al.
patent: 11-289064 (1999-10-01), None
patent: 10-0292594 (1999-11-01), None
patent: 10-0675279 (2006-10-01), None
Bakker A and Huijsing H. Micropower CMOS temperature sensor with digital output. IEEE Journal of Solid-State Circuits. Jul. 7, 1996; 31(7): 933-937.
Bamba H et al. A CMOS band-gap reference circuit with sub 1V operation. 1998 Symposium on VLSI Circuits Digest of Technical Papers. 1998: 228-229.
Xu W et al. A high performance CMOS band-gap reference circuit design. IEEE Int. Workshop VLSI Design & Video Tech. Suzhou, China. May 28-30, 2005: 32-35.

Affiliated with

Also associated with

Rating

Methods of fabricating semiconductor devices having resistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating semiconductor devices having resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor devices having resistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2706943