Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2007-09-04
2010-06-08
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Reexamination Certificate
active
07732315
ABSTRACT:
Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a first insulating material over the semiconductor wafer, and forming a plurality of first features and a plurality of second features in the first insulating material. The plurality of first features is removed, leaving an unfilled pattern in the first insulating material. The unfilled pattern in the first insulating material is filled with a second insulating material.
REFERENCES:
patent: 5003365 (1991-03-01), Havemann et al.
patent: 2002/0192911 (2002-12-01), Parke
Kim Sun-Oo
Kim Yoon-Hae
Geyer Scott B
Infineon - Technologies AG
Samsung Electronics Co,. Ltd.
Slater & Matsil L.L.P.
LandOfFree
Methods of fabricating semiconductor devices and structures... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating semiconductor devices and structures..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor devices and structures... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4243963