Methods of fabricating semiconductor devices

Details Methods of fabricating semiconductor devices Methods of fabricating semiconductor devices

2006-11-08

2009-02-17

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S387000, C438S397000, C438S399000, C438S622000, C438S739000

Reexamination Certificate

active

07491619

ABSTRACT:
Disclosed are methods of fabricating semiconductor devices. A method may include forming a first conductive layer, a first dielectric layer, a second conductive layer, a second dielectric layer, and a third conductive layer. The method may also include forming a mask layer on the third conductive layer, forming a photoresist pattern on the mask layer, and forming at least one middle electrode by patterning the mask layer, the third conductive layer, the second dielectric layer, and the second conductive layer using the photoresist pattern as an etching mask. The method may also include forming a mask pattern by selectively etching a side wall of the patterned mask layer, removing the photoresist pattern, and forming an upper electrode by patterning the third conductive layer using the mask pattern as an etching mask.

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