Methods of fabricating semiconductor device using...

Details Methods of fabricating semiconductor device using... Methods of fabricating semiconductor device using...

2006-02-13

2008-03-25

Norton, Nadine G. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S700000, C216S088000

Reexamination Certificate

active

07348277

ABSTRACT:
There are provided methods of fabricating a semiconductor device using a sacrificial layer. The methods provide an approach to maintaining thickness distribution of the interlayer insulating layers below a sacrificial layer uniform on an overall surface of a semiconductor substrate during performing a chemical mechanical polishing (CMP) process in a damascene process. To this end, the method includes forming a pad layer, a pad interlayer insulating layer, an etch stop layer pattern, a planarized interlayer insulating layer and a sacrificial layer sequentially on a semiconductor substrate. At least one trench is formed in the sacrificial layer and the planarized interlayer insulating layer. A via contact hole is formed in the etch stop layer pattern, the pad interlayer insulating layer, and the pad layer to be disposed below the trench. A diffusion barrier layer and a conductive layer are sequentially formed to fill the trench and the via contact hole. A CMP process is performed on the conductive layer, the diffusion barrier layer, and the sacrificial layer.

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