Methods of fabricating semiconductor device including phase...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S760000, C257SE31029

Reexamination Certificate

active

07838326

ABSTRACT:
Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.

REFERENCES:
patent: 6083597 (2000-07-01), Kondo
patent: 6635914 (2003-10-01), Kozicki et al.
patent: 6709958 (2004-03-01), Li et al.
patent: 6998312 (2006-02-01), Kozicki et al.
patent: 7101728 (2006-09-01), Kozicki et al.
patent: 7701760 (2010-04-01), Campbell et al.
patent: 2002/0168820 (2002-11-01), Kozicki et al.
patent: 2002/0190350 (2002-12-01), Kozicki et al.
patent: 2003/0168651 (2003-09-01), Kozicki
patent: 2003/0209971 (2003-11-01), Kozicki
patent: 2005/0110983 (2005-05-01), Jeong et al.
patent: 2007/0018219 (2007-01-01), Lim et al.
patent: 2007/0058417 (2007-03-01), Roehr
patent: 2007/0121369 (2007-05-01), Happ
patent: 2007/0184613 (2007-08-01), Kim et al.
patent: 2005-159325 (2005-06-01), None
patent: 2007-214565 (2007-08-01), None
patent: 1020040034680 (2004-04-01), None
patent: 1020050049810 (2005-05-01), None
patent: 1020070005040 (2007-01-01), None
patent: 100745761 (2007-07-01), None
patent: WO 03/020998 (2003-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of fabricating semiconductor device including phase... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating semiconductor device including phase..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor device including phase... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4221530

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.