Methods of fabricating phase shift masks by controlling exposure

Details Methods of fabricating phase shift masks by controlling exposure Methods of fabricating phase shift masks by controlling exposure

1997-07-28

1998-12-29

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430323, G03F 900

Patent

active

058539212

ABSTRACT:
A phase shift mask is fabricated by forming a radiation blocking layer on a phase shift mask substrate and forming a photoresist layer on the radiation blocking layer. First portions of the photoresist layer are exposed at a first exposure dose. Second portions of the photoresist layer are exposed at a second exposure dose that is greater than the first exposure dose, such that the second portions of the photoresist layer are wider than the first portions of the photoresist layer. The radiation blocking layer is etched using the photoresist layer as an etch mask, to thereby produce first apertures in the radiation blocking layer beneath the first portions of the photoresist layer and second apertures in the radiation blocking layer which are wider than the first apertures, beneath the second portions of the photoresist layer. The phase shift mask substrate is then etched beneath the second apertures. The first and second exposures are preferably performed by exposing the photoresist layer to electron beams of first and second exposure doses. The first and second portions of the photoresist layer may be overlapping or nonoverlapping. The first and second exposure doses may be multiple exposure doses which cumulatively provide the first and second exposure doses.

REFERENCES:
patent: 5695896 (1997-12-01), Pierrat
patent: 5698346 (1996-01-01), Sugawara
Ferguson et al., "Pattern-Dependent Correction of Mask Topography Effects for Alternating Phase-Shifting Masks", SPIE, vol. 2440, 1995, pp. 349-360.

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