Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-11-28
2011-11-08
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51006, C257SE51025, C257SE51027, C257SE51052, C438S099000
Reexamination Certificate
active
08053761
ABSTRACT:
Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.
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L.A. Majewski et al., “Organic Field-Effect Transistors With Ultrathin Gate Insulator” Synthetic Metals 144 (2004), p. 97-100.
Hahn Jung Seok
Han Kook Min
Kim Joo Young
Koo Bon Won
Lee Sang Yoon
Harness Dickey & Pierce PLC
Lulis Michael
Phung Anh
Samsung Electronics Co,. Ltd.
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