Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-01-20
2009-08-04
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S012000, C257S019000, C257S200000, C257S616000, C257S653000, C257S093000, C257SE29003, C257SE29070, C977S762000, C977S763000, C977S764000, C977S765000
Reexamination Certificate
active
07569847
ABSTRACT:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
REFERENCES:
patent: 3493431 (1970-02-01), Wagner
patent: 3580732 (1971-05-01), Blakeslee et al.
patent: 3632405 (1972-01-01), Knippenberg et al.
patent: 4099986 (1978-07-01), Diepers
patent: 5260957 (1993-11-01), Hakimi et al.
patent: 5332910 (1994-07-01), Haraguchi et al.
patent: 5357119 (1994-10-01), Wang et al.
patent: 5363394 (1994-11-01), Pfeiffer et al.
patent: 5489477 (1996-02-01), Ohta et al.
patent: 5607876 (1997-03-01), Biegelsen et al.
patent: 5702822 (1997-12-01), Terui et al.
patent: 5858862 (1999-01-01), Westwater et al.
patent: 5881200 (1999-03-01), Burt
patent: 5916642 (1999-06-01), Chang
patent: 6093941 (2000-07-01), Russell et al.
patent: 6103540 (2000-08-01), Russell et al.
patent: 6225198 (2001-05-01), Alivisatos et al.
patent: 6231744 (2001-05-01), Ying et al.
patent: 6231980 (2001-05-01), Cohen et al.
patent: 6248674 (2001-06-01), Kamins et al.
patent: 6306736 (2001-10-01), Alivisatos et al.
patent: 6423583 (2002-07-01), Avouris et al.
patent: 6539156 (2003-03-01), Dickson et al.
patent: 6597496 (2003-07-01), Nayfeh et al.
patent: 7129554 (2006-10-01), Lieber et al.
patent: 7301199 (2007-11-01), Lieber et al.
patent: 2001/0051367 (2001-12-01), Kiang
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2006/0175601 (2006-08-01), Lieber et al.
patent: 2007/0281156 (2007-12-01), Lieber et al.
patent: 0 548 905 (1992-12-01), None
patent: 0 838 865 (1997-10-01), None
patent: 0 544 408 (2000-01-01), None
patent: 1 100 106 (2000-10-01), None
patent: H09-288115 (1997-11-01), None
Y. Zhang, et al. “Coaxial Nanocable: Silicon Carbide and Silicon Oxide Sheathed with Boron Nitride and Carbon” (Aug. 14, 1998) Science, vol. 281, p. 973-975.
Hiruma, K. et al., “Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy”, Journal of Crystal Growth, North-Holland Publishing Co., Amsterdam. NL, vol. 163, No. 3, Jun. 1, 1996, pp. 226-231, XP000627505 ISSN: 0022-0248.
Kanjanachuchai, S. et al., “Coulomb blockaded in strained-Si nanowires on leaky virtual substrates”, Semiconductor Science and Technology, vol. 16, No. 2, Feb. 2001, pp. 72-76, XP002209467, London UK.
Haraguchi, K. et al., “Polarization dependence of light emitted from GaAs p-n junctions in quantum wire crystals”, Journal of Applied Physics, American Institute of Physics, New York, US, vol. 75, No. 8, Apr. 15, 1994, pp. 4220-4225, XP000447894 ISSN: 0021-8979.
Givargizov, E. et al., “Fundamental Aspects of VLS Growth”, Journal of Crystal Growth, North-Holland Publishing Co., Amsterdam, NL, No. 31, 1975, pp. 20-30, XP001073851 ISSN: 0022-0248.
Zhang, Y. et al.; “Coaxial Nanocable: Silicon Carbide and Silicon Oxide Sheathed With Boron Nitride and Carbon,” Science, vol. 281, pp. 973-975, Aug. 14, 1998.
Gaul, David A. et al.; “True Blue Inorganic Optoelectronic Devices,” Advanced Materials, vol. 12, No. 13, p. 935-946, Jul. 5, 2000.
Haase, M.A. et al.; “Blue-Green Laser Diodes,” Applied Physics Letters, vol. 59, No. 11, pp. 1272-1274, Sep. 9, 1991.
Nakamura, Shuji et al.; “InGaN-Based Multi-Quantum-Well-Structure Laser Diodes,” Japanese Journal of Applied Physics, vol. 35, pp. L74-L75, Jan. 15, 1996.
Cao, H. et al.; “Spatial Confinement of Laser Light in Active Random Media,” Physical Review Letters, vol. 84, No. 24, pp. 5584-5587, Jun. 12, 2000.
Bagnall, D.M. et al.; “Optically Pumped Lasing of ZnO at Room Temperature,” Applied Physics Letters, vol. 70, No. 17, pp. 2230-2232, Apr. 28, 1997.
Yu, P. et al.; “Room-Temperature Gain Spectra and Lasing in Microcrystalline ZnO Thin Films,” Journal of Crystal Growth, vol. 184/185, pp. 601-604, (1998).
Klingshirn, C.; “Properties of the Electron-Hole Plasma in II-VI Semiconductors,” Journal of Crystal Growth, vol. 117, pp. 753-757, (1992).
Kayanuma, Yosuke; “Quantum-Size Effects of Interacting Electrons and Holes in Semiconductor Microcrystals With Spherical Shape,” Physical Review B, vol. 38, No. 14, pp. 9797-9805, Nov. 15, 1988.
Wegscheider, W. et al.; “Lasing From Excitons in Quantum Wires,” Physical Review Letters, vol. 71, No. 24, p. 4071-4074, plus photo page, Dec. 13, 1993.
Haraguchi, Keiichi et al.; “GaAs p-n Junction Formed in Quantum Wire Crystals,” Applied Physics Letters, vol. 60, No. 6, pp. 745-747, Feb. 10, 1992.
Duan, Xiangfeng et al.; “Indium Phosphide Nanowires as Building Blocks for Nanoscale Electronic and Optoelectronic Devices,” Nature, vol. 409, pp. 66-69, Jan. 4, 2001.
Klimov, V.I. et al.; “Optical Gain and Stimulated Emission in Nanocrystal Quantum Dots,” Science, vol. 290, pp. 314-317, Oct. 13, 2000.
Pavesi, L. et al.; “Optical Gain in Silicon Nanocrystals,” Nature, vol. 408, pp. 440-444, Nov. 23, 2000.
Huang, Michael H. et al.; “Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport,” Advanced Materials, vol. 13, pp. 113-116, (2001).
Fons, P. et al.; “Uniaxial Locked Epitaxy of ZnO on the a Face of Sapphire,” Applied Physics Letters, vol. 77, No. 12, pp. 1801-1803, Sep. 18, 2000.
Wagner, R. S. and Ellis, W.C.; “Vapor-Liquid-Solid Mechanism of Single Crystal Growth,” Applied Physics Letters, vol. 4, No. 5, pp. 89-90, Mar. 1, 1964.
Givargizov, E.I.; “Fundamental Aspects of VLS Growth,” Journal of Crystal Growth, vol. 31, pp. 20-30, (1975).
Bradshaw, Steven M. and Spicer, John L.; “Combustion Synthesis of Aluminum Nitride Particles and Whiskers,” Journal of American Ceramic Society, vol. 82, No. 9, pp. 2293-2300, (1999).
Hu, Jiangtao et al.; “Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes,” Accounts of Chemical Research, vol. 32, pp. 435-445, (1999).
Wagner, R.S.; “VLS Mechanism of Crystal Growth,” in Whisker Technology, edited by A.P. Levitt, pp. 47 thru 119, Wiley-Interscience, New York, (1970).
Hiruma, Kenji et al.; “GaAs Free-Standing Quantum-Size Wires,” Journal of Appliced Physics, vol. 74, No. 5, pp. 3162-3171, Sep. 1, 1993.
Haraguchi, K. et al.; “Self-Organized Fabrication of Planar GaAs Nanowhisker Arrays,” Applied Physics Letters, vol. 69, No. 3, pp. 386-387, Jul. 15, 1996.
Hiruma, Kenji et al.; “Self-Organized Growth of GaAs/InAs Heterostruicture Nanocylinders by Organometallic Vapor Phase Epitaxy,” Journal of Crystal Growth, vol. 163, pp. 226-231, (1996).
Haraguchi, K. et al.; “Polarization Dependence of Light Emitted From GaAsp-nJunctions in Quantum Wire Crystals,” Journal of Applied Physics, vol. 75, No. 8, pp. 4220-4225, Apr. 15, 1994.
Yazawa, Masamitsu et al.; “Semiconductor Nanowhiskers,” Advanced Materials, vol. 5, No. 7/8, pp. 577-580, (1993).
Hu, Jiangtao et al.; “Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes,” Accounts of Chemical Research, vol. 32, No. 5, pp. 435-445, (1999).
Wong, Eric W. et al.; “Nanobeam Mechanics: Elasticity, Strength, and
Fan Rong
Feick Henning
Huang Michael
Kind Hannes
Majumdar Arun
Liu Benjamin Tzu-Hung
Ngo Ngan
O'Banion John P.
The Regents of the University of California
LandOfFree
Methods of fabricating nanostructures and nanowires and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating nanostructures and nanowires and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating nanostructures and nanowires and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4116182