Active solid-state devices (e.g. – transistors – solid-state diode – Miscellaneous
Reexamination Certificate
2006-12-22
2009-08-04
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Miscellaneous
C257S012000, C257S014000, C257S183000, C257S616000, C257SE29070, C257SE29245, C977S762000, C977S763000, C977S765000
Reexamination Certificate
active
07569941
ABSTRACT:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
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Fan Rong
Feick Henning
Huang Michael
Kind Hannes
Majumdar Arun
Liu Benjamin Tzu-Hung
Ngo Ngan
O'Banion John P.
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