Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-07-19
2011-07-19
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257SE21305, C977S888000
Reexamination Certificate
active
07981772
ABSTRACT:
A method is shown for fabricating nanostructures, and more particularly, to methods of fabricating silicon nanowires. The method of manufacturing a nanowire includes forming a sandwich structure of SiX material and material Si over a substrate and etching the sandwich structure to expose sidewalls of the Si material and the SiX material. The method further includes etching the SiX material to expose portions of the Si material and etching the exposed portions of the Si material. The method also includes breaking away the Si material to form silicon nanowires.
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Anderson Brent A.
Bryant Andres
Nowak Edward J.
Sleight Jeffrey W.
International Business Machines - Corporation
Kotulak Richard
Roberts Mlotkowski Safran & Cole P.C.
Shook Daniel
Smith Matthew
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