Methods of fabricating nanostructures

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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C257SE21305, C977S888000

Reexamination Certificate

active

07981772

ABSTRACT:
A method is shown for fabricating nanostructures, and more particularly, to methods of fabricating silicon nanowires. The method of manufacturing a nanowire includes forming a sandwich structure of SiX material and material Si over a substrate and etching the sandwich structure to expose sidewalls of the Si material and the SiX material. The method further includes etching the SiX material to expose portions of the Si material and etching the exposed portions of the Si material. The method also includes breaking away the Si material to form silicon nanowires.

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