Methods of fabricating multi-layer phase-changeable memory...

Details Methods of fabricating multi-layer phase-changeable memory... Methods of fabricating multi-layer phase-changeable memory...

2008-08-11

2009-11-10

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S518000, C438S523000, C257S004000, C257SE21002

Reexamination Certificate

active

07615401

ABSTRACT:
A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

REFERENCES:
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4653024 (1987-03-01), Young et al.
patent: 4820394 (1989-04-01), Young et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4924436 (1990-05-01), Strand
patent: 5124232 (1992-06-01), Nakanishi et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5278011 (1994-01-01), Yamada et al.
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5811816 (1998-09-01), Gallagher et al.
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 6258062 (2001-07-01), Thielen et al.
patent: 6365256 (2002-04-01), Tyan et al.
patent: 6381967 (2002-05-01), Craig
patent: 6429064 (2002-08-01), Wicker
patent: 6437383 (2002-08-01), Xu
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6511862 (2003-01-01), Hudgens et al.
patent: 6670628 (2003-12-01), Lee et al.
patent: 6690026 (2004-02-01), Peterson
patent: 6759267 (2004-07-01), Chen
patent: 6774388 (2004-08-01), Hudgens et al.
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6856002 (2005-02-01), Moore et al.
patent: 6858277 (2005-02-01), Yamada et al.
patent: 6867425 (2005-03-01), Wicker
patent: 6919578 (2005-07-01), Lowrey et al.
patent: 7037762 (2006-05-01), Joo et al.
patent: 7482615 (2009-01-01), Zhu
patent: 7485891 (2009-02-01), Hamann et al.
patent: 2002/0038872 (2002-04-01), Lowrey et al.
patent: 2002/0072010 (2002-06-01), Kubogata
patent: 2002/0081804 (2002-06-01), Gill et al.
patent: 2003/0080427 (2003-05-01), Hudgens et al.
patent: 2003/0151041 (2003-08-01), Chiang
patent: 2004/0012009 (2004-01-01), Casagrande et al.
patent: 2004/0106065 (2004-06-01), Miyamoto et al.
patent: 2004/0115945 (2004-06-01), Lowrey et al.
patent: 2004/0191683 (2004-09-01), Nishihara et al.
patent: 2004/0192006 (2004-09-01), Campbell et al.
patent: 2005/0030800 (2005-02-01), Johnson et al.
patent: 2005/0115829 (2005-06-01), Yahagi et al.
patent: 2005/0227035 (2005-10-01), Fuchioka et al.
patent: 10340489 (1998-12-01), None
patent: 2002-203392 (2002-07-01), None
patent: 1020040078464 (2004-09-01), None
patent: WO 00/54982 (2000-09-01), None
Abstract of Korean Patent Application No. 1020014011708 corresponding to 1020010111276, Matsushita Electric Industrial Col, Ltd.
Notice to File Response/Amendment to the Examination Report, Korean App. No. 10-2004-0012358, Dec. 21, 2005.
Notice to File a Response/Amendment to the Examination Report corresponding to Korean Patent Application No. 10-2004-0012358 mailed May 24, 2006.

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