Electrical connectors – With contact preventer or retractable cover part – Prong cover
Reexamination Certificate
2011-08-02
2011-08-02
Lee, Hsien Ming (Department: 2823)
Electrical connectors
With contact preventer or retractable cover part
Prong cover
C438S290000, C438S479000, C438S597000, C438S652000, C257SE21231, C257SE21257, C257SE21400, C257SE21411
Reexamination Certificate
active
07988470
ABSTRACT:
The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.
REFERENCES:
patent: 4436770 (1984-03-01), Nishizawa et al.
patent: 4695432 (1987-09-01), Colin et al.
patent: 4769291 (1988-09-01), Belkind et al.
patent: 4816082 (1989-03-01), Guha et al.
patent: 4983360 (1991-01-01), Merdrignac et al.
patent: 5279679 (1994-01-01), Murakami et al.
patent: 5346601 (1994-09-01), Barada et al.
patent: 5352300 (1994-10-01), Niwa et al.
patent: 5420452 (1995-05-01), Tran et al.
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5571749 (1996-11-01), Matsuda et al.
patent: 5620523 (1997-04-01), Maeda et al.
patent: 5668663 (1997-09-01), Varaprasad et al.
patent: 5683537 (1997-11-01), Ishii
patent: 5700699 (1997-12-01), Han et al.
patent: 5716480 (1998-02-01), Matsuyama et al.
patent: 5720826 (1998-02-01), Hayashi et al.
patent: 5731856 (1998-03-01), Kim et al.
patent: 5993594 (1999-11-01), Wicker et al.
patent: 6150668 (2000-11-01), Bao et al.
patent: 6153013 (2000-11-01), Sakai et al.
patent: 6153893 (2000-11-01), Inoue et al.
patent: 6159763 (2000-12-01), Sakai et al.
patent: 6180870 (2001-01-01), Sano et al.
patent: 6228236 (2001-05-01), Rosenstein et al.
patent: 6238527 (2001-05-01), Sone et al.
patent: 6329269 (2001-12-01), Hamada et al.
patent: 6388301 (2002-05-01), Tawada et al.
patent: 6458673 (2002-10-01), Cheung
patent: 6488824 (2002-12-01), Hollars et al.
patent: 6566180 (2003-05-01), Park et al.
patent: 6620719 (2003-09-01), Andry et al.
patent: 6700057 (2004-03-01), Yasuno
patent: 6787010 (2004-09-01), Cuomo et al.
patent: 6825134 (2004-11-01), Law et al.
patent: 6881305 (2005-04-01), Black et al.
patent: 6890803 (2005-05-01), Lin et al.
patent: 6943359 (2005-09-01), Vardeny et al.
patent: 6953947 (2005-10-01), Son et al.
patent: 7026713 (2006-04-01), Hoffman et al.
patent: 7037157 (2006-05-01), Murakami et al.
patent: 7145174 (2006-12-01), Chiang et al.
patent: 7158208 (2007-01-01), De Jager et al.
patent: 7189992 (2007-03-01), Wager, III et al.
patent: 7235810 (2007-06-01), Yamazaki et al.
patent: 7297977 (2007-11-01), Hoffman et al.
patent: 7309895 (2007-12-01), Hoffman et al.
patent: 7339187 (2008-03-01), Wager, III et al.
patent: 7378286 (2008-05-01), Hsu et al.
patent: 7382421 (2008-06-01), Hoffman et al.
patent: 7601984 (2009-10-01), Sano et al.
patent: 7626201 (2009-12-01), Chiang et al.
patent: 7629191 (2009-12-01), Chiang et al.
patent: 7750440 (2010-07-01), Yagi
patent: 7879698 (2011-02-01), Ye
patent: 2002/0117719 (2002-08-01), Ando et al.
patent: 2002/0149053 (2002-10-01), Tsunoda et al.
patent: 2003/0015234 (2003-01-01), Yasuno
patent: 2003/0049464 (2003-03-01), Glenn et al.
patent: 2003/0207093 (2003-11-01), Tsuji et al.
patent: 2004/0018797 (2004-01-01), Murakami et al.
patent: 2004/0113098 (2004-06-01), Vardeny et al.
patent: 2004/0164294 (2004-08-01), Son et al.
patent: 2004/0175511 (2004-09-01), Hartig
patent: 2004/0235224 (2004-11-01), Lin et al.
patent: 2005/0017244 (2005-01-01), Hoffman et al.
patent: 2005/0028860 (2005-02-01), Sano et al.
patent: 2005/0062057 (2005-03-01), Yamazaki et al.
patent: 2005/0062409 (2005-03-01), Yamazaki et al.
patent: 2005/0067953 (2005-03-01), Yamazaki et al.
patent: 2005/0181532 (2005-08-01), Patel et al.
patent: 2005/0181534 (2005-08-01), Yoshimi et al.
patent: 2005/0233092 (2005-10-01), Choi et al.
patent: 2005/0233595 (2005-10-01), Choi et al.
patent: 2005/0251990 (2005-11-01), Choi et al.
patent: 2006/0011139 (2006-01-01), Sterling et al.
patent: 2006/0033106 (2006-02-01), Seo et al.
patent: 2006/0038182 (2006-02-01), Rogers et al.
patent: 2006/0043447 (2006-03-01), Ishii et al.
patent: 2006/0046476 (2006-03-01), Nakamura et al.
patent: 2006/0065299 (2006-03-01), Fukawa et al.
patent: 2006/0108636 (2006-05-01), Sano et al.
patent: 2006/0125098 (2006-06-01), Hoffman et al.
patent: 2006/0258064 (2006-11-01), Chen et al.
patent: 2006/0286725 (2006-12-01), Cheng et al.
patent: 2007/0007125 (2007-01-01), Krasnov et al.
patent: 2007/0026321 (2007-02-01), Kumar
patent: 2007/0030569 (2007-02-01), Lu et al.
patent: 2007/0057261 (2007-03-01), Jeong et al.
patent: 2007/0065962 (2007-03-01), Pichler
patent: 2007/0068571 (2007-03-01), Li et al.
patent: 2007/0141784 (2007-06-01), Wager et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
patent: 2007/0252129 (2007-11-01), Yagi
patent: 2007/0252147 (2007-11-01), Kim et al.
patent: 2007/0252152 (2007-11-01), Sato et al.
patent: 2008/0108198 (2008-05-01), Wager et al.
patent: 2008/0132009 (2008-06-01), Hirai
patent: 2008/0173870 (2008-07-01), Kim et al.
patent: 2008/0224133 (2008-09-01), Park et al.
patent: 2008/0264777 (2008-10-01), Ye
patent: 2008/0272388 (2008-11-01), Ushiyama et al.
patent: 2008/0308411 (2008-12-01), Guo et al.
patent: 2009/0023959 (2009-01-01), D'Amore et al.
patent: 2009/0026065 (2009-01-01), Nukeaw et al.
patent: 2009/0045398 (2009-02-01), Kato et al.
patent: 2009/0050884 (2009-02-01), Ye
patent: 2009/0212287 (2009-08-01), Nathan et al.
patent: 2009/0233424 (2009-09-01), Ye
patent: 2009/0236597 (2009-09-01), Ye
patent: 2009/0239335 (2009-09-01), Akimoto et al.
patent: 2009/0305461 (2009-12-01), Akimoto et al.
patent: 2010/0001274 (2010-01-01), Ye
patent: 2010/0078633 (2010-04-01), Watanabe
patent: 2010/0090215 (2010-04-01), Lee
patent: 2010/0109002 (2010-05-01), Itagaki et al.
patent: 2010/0117073 (2010-05-01), Yamazaki et al.
patent: 2010/0120197 (2010-05-01), Levy et al.
patent: 2010/0140611 (2010-06-01), Itagaki et al.
patent: 2010/0193783 (2010-08-01), Yamazaki et al.
patent: 2010/0252832 (2010-10-01), Asano et al.
patent: 1588623 (2005-03-01), None
patent: 145403 (1985-06-01), None
patent: 02-240637 (1990-09-01), None
patent: 06-045354 (1994-02-01), None
patent: 3958605 (2007-05-01), None
patent: 1999009046 (1999-03-01), None
patent: 2001-0011855 (2001-02-01), None
patent: 2001051193 (2001-06-01), None
patent: WO-2008/133345 (2008-11-01), None
patent: WO-2010/002803 (2010-01-01), None
Toyoura et al., “Optical properties of zinc nitride formed by molten salt electrochemical process”, Thin Film Solids 492 (2005), pp. 88-92.
Ma et al., “Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties”, J. Vac. Sci. Technol. B 22(1), Jan./Feb. 2004, pp. 94-98.
Fortunato et al., “Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature”, Applied Physics Letters, vol. 85, No. 13, Sep. 27, 2004, pp. 2541-2543.
Hoffman et al., “ZnO-based transparent thin-film transistors”, Applied Physics Letters, vol. 82, No. 5, Feb. 3, 2003, pp. 733-735.
Zong et al., “Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering”, Applied Surface Science 252 (2006), pp. 7983-7986.
Bain et al., “Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis”, Applied Physics Letters, vol. 84, No. 4, Jan. 26, 2004, pp. 541-543.
Barnes et al., “On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide”, Applied Physics Letters, 86, 112112 (2005).
Hirao et al., “4.1: Distinguished Paper: High Mobility Top-Gate Zinc Oxide Thin-Film Transistors (ZnO-TFTs) for Active-Matrix Liquid Crystal Displays”, SID 06 Digest (2006), pp. 18-20.
Hosano et al., “Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides
Applied Materials Inc.
Lee Hsien Ming
Patterson & Sheridan L.L.P.
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