Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2011-01-11
2011-01-11
Ha, Nguyen T (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S311000, C361S312000, C361S306100, C361S306300, C361S328000
Reexamination Certificate
active
07869189
ABSTRACT:
A method of fabricating an integrated circuit device includes forming a plurality of lower capacitor electrodes vertically extending from a substrate. The plurality of lower capacitor electrodes respectively include an inner sidewall and an outer sidewall. At least one support pattern is formed vertically extending between ones of the plurality of lower capacitor electrodes from top portions thereof opposite the substrate and along the outer sidewalls thereof towards the substrate to a depth that is greater than a lateral distance between adjacent ones of the plurality of lower capacitor electrodes. A dielectric layer is formed on the support pattern and on outer sidewalls of the plurality of lower capacitor electrodes, and an upper capacitor electrode is formed on the dielectric layer. Related devices are also discussed.
REFERENCES:
patent: 6693299 (2004-02-01), Yamazaki et al.
patent: 7351629 (2008-04-01), Choi et al.
patent: 7375426 (2008-05-01), Kang et al.
patent: 7510932 (2009-03-01), Oh et al.
patent: 2005/0093046 (2005-05-01), Ahn
patent: 2005/0099760 (2005-05-01), Park
patent: 2006/0046382 (2006-03-01), Yoon et al.
patent: 2010/0177459 (2010-07-01), Wu et al.
patent: 2003-273247 (2003-09-01), None
patent: 1020040000069 (2004-01-01), None
patent: 1020040100502 (2004-12-01), None
patent: 1020050000896 (2005-01-01), None
patent: 1020050019500 (2005-03-01), None
patent: 10-2005-0042624 (2005-05-01), None
patent: 1020060018933 (2006-03-01), None
Notice to File a Response/Amendment to the Examination Report corresponding to Korean Patent Application No. 10-2007-0010569 mailed Jan. 16, 2008.
Cho Sung-il
Cho Young-kyu
Choi Yong-hee
Lim Seok-Hyun
Ha Nguyen T
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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