Methods of fabricating integrated circuit devices having...

Details Methods of fabricating integrated circuit devices having... Methods of fabricating integrated circuit devices having...

2007-01-30

2008-09-02

Potter, Roy K (Department: 2822)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S128000

Reexamination Certificate

active

07419856

ABSTRACT:
An integrated circuit device is provided including an integrated circuit substrate having a fuse region. A window layer is provided on the integrated circuit substrate that defines a fuse region. The window layer is positioned at an upper portion of the integrated circuit device and recessed beneath a surface of the integrated circuit device. A buffer pattern is provided between the integrated circuit substrate and the window layer and a fuse pattern is provided between the buffer pattern and the window layer. Methods of forming integrated circuit devices are also described.

REFERENCES:
patent: 5025300 (1991-06-01), Billig et al.
patent: 6040614 (2000-03-01), Kitaguchi et al.
patent: 6100117 (2000-08-01), Hao et al.
patent: 6100118 (2000-08-01), Shih et al.
patent: 6121073 (2000-09-01), Huang et al.
patent: 6180503 (2001-01-01), Tzeng et al.
patent: 6295721 (2001-10-01), Tsai
patent: 6300232 (2001-10-01), Satoh
patent: 6448113 (2002-09-01), Lee et al.
patent: 6573125 (2003-06-01), Bae
patent: 6642135 (2003-11-01), Kim et al.
patent: 6713837 (2004-03-01), Mori et al.
patent: 6716679 (2004-04-01), Bae
patent: 10-2001-0037795 (2001-05-01), None
patent: 10-2001-0061081 (2001-07-01), None
“Translation of an Official Action as issued by the German Patent and Trademark Office,” corresponding to German Patent application 103 50 510.5-33, mailed May 11, 2005.

Affiliated with

Also associated with

Rating

Methods of fabricating integrated circuit devices having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating integrated circuit devices having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating integrated circuit devices having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3983067