Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2005-07-07
2009-06-16
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S399000, C438S255000, C438S649000, C438S664000, C438S682000, C257S307000, C257S308000, C257S309000
Reexamination Certificate
active
07547607
ABSTRACT:
A method of fabricating an integrated circuit capacitor includes forming a first metal layer on a conductive plug in an interlayer insulating layer on a substrate. At least a portion of the first metal layer is silicided to form a metal silicide layer and a remaining first metal layer on the conductive plug. The remaining first metal layer is removed using a dry etching process. A lower electrode including a second metal layer is then formed on the metal silicide layer. Because the remaining first metal layer is removed, etching and/or other damage to the conductive plug and/or the interlayer insulating layer during a subsequent wet ethching process may be reduced and/or prevented.
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Notice to Submit Response corresponding to Korean Patent Application No. 10-2004-0061424 mailed Feb. 28, 2006.
Choi Gil-Heyun
Lee Sang-Woo
Moon Kwang-jin
Park Jae-Hwa
Myers Bigel Sibley & Sajovec P.A.
Richards N Drew
Samsung Electronics Co,. Ltd.
Singal Ankush k
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