Methods of fabricating image sensors including local...

Details Methods of fabricating image sensors including local... Methods of fabricating image sensors including local...

2007-03-06

2007-03-06

Le, Thao X. (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000, C438S079000, C257SE27133

Reexamination Certificate

active

11348642

ABSTRACT:
A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.

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Office Action, Korean Application No. 2003-29877, Apr. 30, 2004.

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