Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2011-04-19
2011-04-19
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S144000, C257SE27133
Reexamination Certificate
active
07927902
ABSTRACT:
A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
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Hong Jong-wook
Park Chan
Park Keo-sung
Park Won-Je
Park Young-Hoon
Ahmed Selim
Harness & Dickey & Pierce P.L.C.
Pert Evan
Samsung Electronics Co,. Ltd.
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