Methods of fabricating Fin-field effect transistors...

Details Methods of fabricating Fin-field effect transistors... Methods of fabricating Fin-field effect transistors...

2006-11-28

2006-11-28

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S151000, C257SE21411, C257SE21158

Reexamination Certificate

active

07141456

ABSTRACT:
Methods for fabricating Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is formed on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is formed in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is formed on the first insulation layer and a second insulation layer is formed on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin. Related Fin-FETs are also provided.

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patent: 2004/0262687 (2004-12-01), Jung et al.
patent: 2005/0258476 (2005-11-01), Cheng et al.

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