Methods of fabricating ferroelectric capacitors having...

Details Methods of fabricating ferroelectric capacitors having... Methods of fabricating ferroelectric capacitors having...

2007-05-04

2009-10-13

Trinh, (Vikki) Hoa B (Department: 2893)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S239000, C438S240000, C257SE21009

Reexamination Certificate

active

07601548

ABSTRACT:
Ferroelectric capacitors are provided that include an integrated circuit substrate and a supporting insulation layer on the integrated circuit substrate having a face and a trench in the face. An oxidation barrier conductive layer is provided in the trench and a lower electrode is provided on the oxidation barrier conductive layer. A ferroelectric layer is provided on the lower electrode and an upper electrode is provided on the ferroelectric layer. Related methods of fabricating ferroelectric capacitors are also provided.

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Korean Patent Office, Notice to File a Response/Amendment to the Examination Report, Aug. 26, 2004.
Korean Patent Office, Notice to File a Response To a Rejection, corresponding to Korean Patent application 2002-54908, received Mar. 15, 2005.

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