Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2006-04-11
2006-04-11
Blum, David (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S093000, C438S094000, C438S095000, C257S442000, C427S076000
Reexamination Certificate
active
07026228
ABSTRACT:
The invention relates to a method of depositing Hg1-xCdxTe onto a substrate, in a MOVPE technique, where 0≦x≦1; comprising the step of reacting together a volatile organotellurium compound, and one or both of (i) a volatile organocadmium compound and (ii) mercury vapour; characterised in that the organotellurium compound is isopropylallyltelluride. The invention also relates to devices, such as infrared sensors and solar cells, that comprise Hg1-xCdxTe materials.
REFERENCES:
patent: 4566918 (1986-01-01), Irvine et al.
patent: 4804638 (1989-02-01), Hoke et al.
patent: 5124481 (1992-06-01), Higa et al.
patent: 5189297 (1993-02-01), Ahlgren
patent: 0 045 258 (1982-02-01), None
patent: 0 285 834 (1988-10-01), None
patent: 0 285 834 (1988-10-01), None
patent: 0 525 881 (1993-02-01), None
patent: 2 249 790 (1992-05-01), None
patent: 90 15796 (1990-12-01), None
R. Morrison and R. Boyd, Organic Chemistry, Fourth Edition, Allyn and Bacon, 1983, p. 21.
Database Chemical Abstract Online, Columbus, Ohio; Abstract No. 112:97989; Jul. 9, 1989, Gedridge, R et al.; “New Organotellurium Precursors for the Pyrolytic and Photolytic Deposition of Mercury Cadmium Telluride”, XP002153037.
J.E. Hails et al; “Methyl(Allyl)Telluride as a Te Precursor for Growth of (Hg,Cd) Te by Metal Organic Vapour Phase Epitaxy”, Journal of Crystal Growth, vol. 145, No. 1-4, Dec. 1994, pp. 596-601, XP002153036.
Hails et al; “Screening of Organotellurium Compounds for Use as MOVPE Precursors”, Journal of Crystal Growth, NL, North-Holland Publishing Co. Amsterdam, vol. 107, No. ¼, 1991, pp. 319-324, XP000245842.
Patent Abstract of Japan, vol. 012, No. 072 (E-588), Mar. 5, 1988 & JP 62 214626 A, Sep. 21, 1987.
Hails et al; “Allyl-Iso-Propyltelluride, a New MOVPE Precursor for CdTe, HgTe and (HgCd)Te”; Journal of Crystal Growth, North-Holland Publishing Co. Amsterdam, NL, vol. 214-215, Jun. 2000, pp. 45-49, XP004200961.
Gedridge, R. et al; “125Te,13C and1H NMR Characterization of a Series of Diorganotellurium (II) and Tetraorganotellurium (IV) Compounds”, Magnetic Resonance In Chemistry, vol. 33, 1995, pp. 441-448.
Kirss et al; “Ligand-Exchange Reactions in Organotellurides by125Te NMR Spectroscopy”, American Chemical Society, Organometallics 1991, 10, 3597-3599.
Gedridge et al; “New Organotellurium Precursors for the Pyrolytic and Photolytic Deposition of Hg1-xCdxTe”, Mat. Res. Soc. Symp. Proc., vol 131, 1989, pp. 69-73.
Hails et al; “A Chemical Assessment of the Suitability of Allyl-Iso-Propyltelluride as a Te Precursor for Metal Organic Vapour Phase Epitaxy”; School of Chemistry, University of St. Andrews, UK, p. 1-15 (including figures).
Bell William
Cole-Hamilton David J.
Foster Douglas F.
Hails Janet E.
Turney, legal representative Saamara N.
Blum David
Doty Heather
Nixon & Vanderhye P.C.
QinetiQ Limited
LandOfFree
Methods of fabricating devices and semiconductor layers... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating devices and semiconductor layers..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating devices and semiconductor layers... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3572513