Methods of fabricating contacts for semiconductor devices...

Details Methods of fabricating contacts for semiconductor devices... Methods of fabricating contacts for semiconductor devices...

2005-10-11

2005-10-11

Chaudhuri, Olik (Department: 2824)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S637000, C438S618000

Reexamination Certificate

active

06953741

ABSTRACT:
Methods for fabricating a contact of a semiconductor device are provided by patterning an interlayer dielectric of the semiconductor device to form a contact hole that exposes a silicon-based region of a first impurity type. The exposed silicon-based region is doped with a gas containing an element of the first impurity type and a contact plug is formed in the contact hole. Contact structure for a semiconductor device are also provided that include an interlayer dielectric of the semiconductor device having a contact hole formed therein that exposes a silicon-based region of a first impurity type. A delta-doped region of the first impurity type is provided in the exposed silicon-based region. A contact plug is provided in the contact hole and on the delta-doped region.

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