Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2006-11-08
2010-06-01
Walke, Amanda C. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S311000, C430S271100, C430S905000, C525S100000
Reexamination Certificate
active
07727703
ABSTRACT:
A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.
REFERENCES:
patent: 4144376 (1979-03-01), Beckmann et al.
patent: 4791171 (1988-12-01), Cunningham
patent: 4867838 (1989-09-01), Brooks et al.
patent: 5008362 (1991-04-01), Wilharm et al.
patent: 5270151 (1993-12-01), Agostino et al.
patent: 5384192 (1995-01-01), Long et al.
patent: 6844131 (2005-01-01), Oberlander et al.
patent: 2004/0002176 (2004-01-01), Xu
patent: 2004/0072436 (2004-04-01), RamachandraRao et al.
patent: 2005/0026080 (2005-02-01), Jung
patent: 2006/0214154 (2006-09-01), Yang et al.
patent: 285025 (1988-10-01), None
patent: 01239545 (1989-09-01), None
patent: 548310 (2003-08-01), None
patent: 250826 (2006-03-01), None
2006 International Conference on Solid State Devices and Materials, Sep. 13-15, 2006, Kanagawa, Japan, pp. 1-24.
Lo et al., Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp. 923-933.
Müller et al., Journal of Applied Physics 98, pp. 1-3, 2005.
Yoon et al., Journal of the American Chemical Society, vol. 127, No. 29, 2005, pp. 1-8.
Lo Po-Yuan
Pei Zing-Way
Yang Feng-Yu
Birch & Stewart Kolasch & Birch, LLP
Industrial Technology Research Institute
Walke Amanda C.
LandOfFree
Methods of fabricating an electronic device and an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating an electronic device and an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating an electronic device and an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4193704