Methods of fabricating alignment key structures in...

Details Methods of fabricating alignment key structures in... Methods of fabricating alignment key structures in...

2005-06-28

2008-12-16

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S253000, C438S401000

Reexamination Certificate

active

07465604

ABSTRACT:
An integrated circuit device includes a storage cell including an upper electrode and a lower electrode on a substrate, and a conductive hard mask pattern directly on the upper electrode of the storage cell opposite the lower electrode. The upper electrode is formed of a metal softer than the conductive hard mask pattern. The device further includes an interlayer on the substrate having an alignment key recess therein. The alignment key recess extends towards the substrate beyond a depth of the upper electrode. An alignment key pattern may extend towards the substrate beyond the depth of the upper electrode on opposing sidewalls and on a surface therebetween of the alignment key recess. The alignment key pattern may have a distinct step difference between portions thereof on the opposing sidewalls and portions thereof on the surface therebetween. Related methods are also discussed.

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Notice to File a Response/Amendment to the Examination Report corresponding to Korean Patent Application No. 10-2004-0051179 mailed Jan. 27, 2006.
C. Brubaker et al;Advances in Processing of Compound Semiconductor Substrates, no date.

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