Methods of fabricating a semiconductor substrate for...

Details Methods of fabricating a semiconductor substrate for... Methods of fabricating a semiconductor substrate for...

2006-10-31

2006-10-31

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S716000, C438S748000

Reexamination Certificate

active

07129174

ABSTRACT:
Methods of fabricating a semiconductor device can include forming at least one layer on a first and a second side of a semiconductor substrate. Portions of the at least one layer may be removed on the first side of the semiconductor substrate to form a pattern of the at least one layer on the first side of the substrate while the at least one layer is maintained on the second side of the substrate. A capping layer can be formed on the pattern of the at least one layer on the first side of the substrate and on the at least one layer on the second side of the semiconductor substrate. The capping layer can be removed on the second side of the semiconductor substrate, thereby exposing the at least one layer on the second side of the substrate while maintaining the capping layer on the first side of the substrate. The at least one layer can be removed on the second side of the semiconductor substrate, while the capping layer and the pattern of the at least one layer is maintained on the first side of the semiconductor substrate. A portion of the capping layer can be removed on the first side of the semiconductor substrate.

REFERENCES:
patent: 6090708 (2000-07-01), Sandhu et al.
patent: 6861359 (2005-03-01), Ota et al.
patent: 2002/0132393 (2002-09-01), Kraxenberger et al.
patent: 06-216064 (1994-08-01), None
patent: 1020000003235 (2000-01-01), None
patent: 1020010008576 (2001-02-01), None

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