Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-04-29
2008-04-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S704000, C438S638000, C257SE21257
Reexamination Certificate
active
07365021
ABSTRACT:
Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.
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Han Sang-Cheol
Hwang Jeong-Wook
Kim Mi-young
Kim Tai-Hyoung
Son Hong-seong
Lebentritt Michael
Mills & Onello LLP
Patel Reema
Samsung Electronics Co,. Ltd.
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