Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-04-08
2008-04-08
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C257SE21228, C510S175000
Reexamination Certificate
active
11089208
ABSTRACT:
This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
REFERENCES:
patent: 6057248 (2000-05-01), Wu et al.
patent: 6210988 (2001-04-01), Howe et al.
patent: 6399487 (2002-06-01), Lai et al.
patent: 6930017 (2005-08-01), Andreas et al.
patent: 2002/0004265 (2002-01-01), Vepa et al.
patent: 2001-351869 (2001-12-01), None
patent: 2002-289533 (2002-10-01), None
patent: 2003-17670 (2003-01-01), None
patent: 1999-016917 (1999-03-01), None
Han Jeong-Nam
Kim Yu-Kyung
Ko Hyung-Ho
Kwon Doo-Won
Mun Chang-Sup
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Sarkar Asok Kumar
LandOfFree
Methods of fabricating a semiconductor device using a dilute... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating a semiconductor device using a dilute..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating a semiconductor device using a dilute... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3943946