Methods of fabricating a semiconductor device using a dilute...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C257SE21228, C510S175000

Reexamination Certificate

active

07354868

ABSTRACT:
This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

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patent: 6210988 (2001-04-01), Howe et al.
patent: 6399487 (2002-06-01), Lai et al.
patent: 6930017 (2005-08-01), Andreas et al.
patent: 2002/0004265 (2002-01-01), Vepa et al.
patent: 2001-351869 (2001-12-01), None
patent: 2002-289533 (2002-10-01), None
patent: 2003-17670 (2003-01-01), None
patent: 1999-016917 (1999-03-01), None

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