Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-03-06
2010-12-21
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21430, C257SE21461
Reexamination Certificate
active
07855126
ABSTRACT:
Devices and methods of fabricating a conductive pattern of such devices comprise a non-single crystalline semiconductor pattern formed on a single crystalline semiconductor substrate, an insulating spacer formed on a sidewall of the non-single crystalline semiconductor pattern, the non-single crystalline semiconductor pattern selectively recessed using a cyclic selective epitaxial growth (SEG) process, and a silicide layer formed on the recessed non-single crystalline semiconductor pattern.
REFERENCES:
patent: 4549926 (1985-10-01), Corboy, Jr. et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4592792 (1986-06-01), Corboy, Jr. et al.
patent: 4698316 (1987-10-01), Corboy, Jr. et al.
patent: 4838993 (1989-06-01), Aoki et al.
patent: 5635746 (1997-06-01), Kimura et al.
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5899752 (1999-05-01), Hey et al.
patent: 6190453 (2001-02-01), Boydston et al.
patent: 6290774 (2001-09-01), Solomon et al.
patent: 6346732 (2002-02-01), Mizushima et al.
patent: 6391749 (2002-05-01), Park et al.
patent: 6429084 (2002-08-01), Park et al.
patent: 6605498 (2003-08-01), Murthy et al.
patent: 6777759 (2004-08-01), Chau et al.
patent: 6852600 (2005-02-01), Wang et al.
patent: 6998305 (2006-02-01), Arena et al.
patent: 7361563 (2008-04-01), Shin et al.
patent: 7517775 (2009-04-01), Kim et al.
patent: 7572715 (2009-08-01), Kim et al.
patent: 7611973 (2009-11-01), Shin et al.
patent: 2002/0034864 (2002-03-01), Mizushima et al.
patent: 2002/0157688 (2002-10-01), Joo
patent: 2002/0192930 (2002-12-01), Rhee et al.
patent: 2004/0045499 (2004-03-01), Langdo et al.
patent: 2004/0129982 (2004-07-01), Oda et al.
patent: 2004/0171238 (2004-09-01), Arena et al.
patent: 2005/0040472 (2005-02-01), Oh et al.
patent: 2005/0176204 (2005-08-01), Langdo et al.
patent: 2005/0263795 (2005-12-01), Choi et al.
patent: 2005/0279997 (2005-12-01), Shin et al.
patent: 2006/0073679 (2006-04-01), Airaksinen et al.
patent: 2006/0088968 (2006-04-01), Shin et al.
patent: 2006/0131656 (2006-06-01), Shin et al.
patent: 2006/0156970 (2006-07-01), Dong-Suk et al.
patent: 2006/0202278 (2006-09-01), Shima et al.
patent: 2006/0234488 (2006-10-01), Kim et al.
patent: 2006/0258125 (2006-11-01), Langdo et al.
patent: 2007/0010093 (2007-01-01), Wang et al.
patent: 2007/0048907 (2007-03-01), Lee et al.
patent: 2007/0131159 (2007-06-01), Kim et al.
patent: 2007/0134879 (2007-06-01), Kim et al.
patent: 2007/0148835 (2007-06-01), Shima et al.
patent: 2007/0148919 (2007-06-01), Lin et al.
patent: 2007/0202669 (2007-08-01), Fukuda et al.
patent: 361265814 (1986-11-01), None
patent: 03050191 (1991-03-01), None
patent: 403050771 (1991-03-01), None
patent: 07-161991 (1995-06-01), None
patent: 2005-228761 (2005-08-01), None
patent: 1020000032858 (2000-06-01), None
patent: 102000005596 (2000-09-01), None
patent: 10-2001-0036270 (2001-05-01), None
patent: 10-2002-0013197 (2002-02-01), None
patent: 10-2002-0028488 (2002-04-01), None
patent: 1020050010252 (2005-01-01), None
patent: 1020050119991 (2005-12-01), None
Shin Dong-Suk
Shin Hong-Jae
Everhart Caridad M
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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