Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2007-06-29
2009-06-02
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making passive device
C257SE21364, C257SE21366
Reexamination Certificate
active
07541252
ABSTRACT:
A method of fabricating a semiconductor device includes forming a conductive layer on a semiconductor substrate, forming an insulating layer on the conductive layer, forming a word line and isolation trenches by patterning the insulating layer and the conductive layer, forming an isolation layer that fills the isolation trenches, forming a cell contact hole in the insulating layer such that the cell contact hole is self-aligned with the word line and exposes the word line, and forming a cell diode in the cell contact hole.
REFERENCES:
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 6579760 (2003-06-01), Lung
patent: 6784046 (2004-08-01), Gonzalez et al.
patent: 2005/0207248 (2005-09-01), Hsu
patent: 2006/0237756 (2006-10-01), Park et al.
patent: 10-2006-0094424 (2006-08-01), None
patent: 10-2006-0110559 (2006-10-01), None
patent: 10-2007-0079647 (2007-08-01), None
patent: 03/021693 (2003-03-01), None
patent: 2004/017437 (2004-02-01), None
Eun Sung-ho
Kim Jung-In
Ko Seung-Pil
Oh Jae-Hee
Oh Yong-Tae
Kebede Brook
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Methods of fabricating a semiconductor device including a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating a semiconductor device including a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating a semiconductor device including a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4062566