Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2006-06-13
2008-12-23
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S780000, C257SE21026, C257SE21027
Reexamination Certificate
active
07468327
ABSTRACT:
Methods of fabricating a microelectromechanical structure are provided. An exemplary embodiment of a method of fabricating a microelectromechanical structure comprises providing a substrate. A first patterned sacrificial layer is formed on portions of the substrate, the first patterned sacrificial layer comprises a bulk portion and a protrusion portion. A second patterned sacrificial layer is formed over the first sacrificial layer, covering the protrusion portion and portions of the bulk portion of the first patterned sacrificial layer, wherein the second patterned sacrificial layer does not cover sidewalls of the first patterned sacrificial layer. An element layer is formed over the substrate, covering portions of the substrate, the first patterned sacrificial layer and second patterned sacrificial layer. The first and second patterned sacrificial layers are removed, leaving a microstructure on the substrate.
REFERENCES:
patent: 5638946 (1997-06-01), Zavracky
patent: 6617185 (2003-09-01), Geisberger
patent: 6621022 (2003-09-01), Ma et al.
patent: 6908781 (2005-06-01), Anderson et al.
Chang Chia-Hua
Lai Tsung-Mu
Wu Hua-Shu
Birch & Stewart Kolasch & Birch, LLP
Coleman W. David
Nguyen Khiem D.
Taiwan Semiconductor Manufacturing Co. Ltd.
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