Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-26
2010-10-12
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S680000, C438S692000, C257SE21006, C257SE21170, C257SE21320, C257SE21218, C257SE21253, C257SE21267, C257SE21304, C257SE21499, C257SE21645
Reexamination Certificate
active
07811919
ABSTRACT:
Methods for fabricating a back-end-of-line (BEOL) wiring structure that includes an on-chip inductor and an on-chip capacitor, as well as methods for tuning and fabricating a resonator that includes the on-chip inductor and on-chip capacitor. The fabrication methods generally include forming the on-chip capacitor and on-chip inductor in different metallization levels of the BEOL wiring structure and laterally positioned to be substantially vertical alignment. The on-chip capacitor may serve as a Faraday shield for the on-chip inductor. Optionally, a Faraday shield may be fabricated either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the directly-connected electrodes of the on-chip capacitor for tuning, during circuit operation, a resonance frequency of an LC resonator that further includes the on-chip inductor.
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Daley Douglas M.
Erturk Mete
Gordon Edward J.
International Business Machines - Corporation
Nhu David
Wood Herron & Evans LLP
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