Methods of etching silicon-containing films on silicon...

Details Methods of etching silicon-containing films on silicon... Methods of etching silicon-containing films on silicon...

2011-08-16

2011-08-16

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

C216S106000, C216S107000, C438S753000

Reexamination Certificate

active

07998359

ABSTRACT:
A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.

REFERENCES:
patent: 7491650 (2009-02-01), Fucsko et al.
patent: 2006/0043521 (2006-03-01), Trivedi et al.
patent: 2006/0148268 (2006-07-01), Seo et al.
patent: 2008/0179715 (2008-07-01), Coppa

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