Methods of etching intermediate silicon germanium layers...

Details Methods of etching intermediate silicon germanium layers... Methods of etching intermediate silicon germanium layers...

2006-05-02

2006-05-02

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S423000, C438S207000, C438S444000

Reexamination Certificate

active

07037768

ABSTRACT:
An integrated circuit device structure can be formed by forming an implant mask having a window therein on a structure including upper and lower Si layers and an intermediate SiGexlayer therebetween. Ions are implanted through the upper Si layer and into a portion of the intermediate SiGexlayer exposed through the window in the implant mask and blocking implantation of ions into portions of the intermediate SiGexlayer outside the window. The portions of the intermediate SiGexlayer outside the window are etched and the portion of the intermediate SiGexlayer exposed through the window having ions implanted therein is not substantially etched to form a patterned intermediate SiGexlayer.

REFERENCES:
patent: 6429091 (2002-08-01), Chen et al.
patent: 2003/0137017 (2003-07-01), Hisamoto et al.

Affiliated with

Also associated with

Rating

Methods of etching intermediate silicon germanium layers... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of etching intermediate silicon germanium layers..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of etching intermediate silicon germanium layers... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3578124