Methods of erasing a non-volatile memory device having...

Details Methods of erasing a non-volatile memory device having... Methods of erasing a non-volatile memory device having...

2006-08-15

2006-08-15

Mai, Son (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185270, C365S185330

Reexamination Certificate

active

07092298

ABSTRACT:
Methods of erasing a non-volatile memory device having discrete charge trap sites between a semiconductor substrate and a gate include applying a negative voltage to a gate at least partially spaced apart from a semiconductor substrate by a charge storage layer providing discrete charge trap sites. A first positive voltage is applied to a source formed in the semiconductor substrate adjacent to one sidewall of the gate. A second positive voltage, which is equal to or less than the first positive voltage, is applied to a drain formed in the semiconductor substrate adjacent to the gate and located opposite the source.

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