Methods of determining parameters of a semiconductor device and

Details Methods of determining parameters of a semiconductor device and Methods of determining parameters of a semiconductor device and

1997-05-09

1999-10-05

Dutton, Brian

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

324716, G01R 3126, G01R 2708, H01L 2166

Patent

active

059637846

ABSTRACT:
The present invention provides methods of determining a smallest dimension of a fabricated device on a semiconductor substrate, methods of determining width of a structure comprising a refractory metal silicide, methods of determining parameters of a semiconductor device comprising a refractory metal silicide, and methods of determining width of an insulative spacer of a semiconductor device. One aspect of the present invention provides a method of determining a smallest dimension of a fabricated device on a semiconductor substrate comprising: providing a first substrate area and a second substrate area; subjecting the first substrate area and the second substrate area to the same processing conditions to achieve regions of like material on the first and second substrate areas, the like material in the first area having a smallest dimension which is greater than a smallest dimension of the like material in the second area; determining parameters of the first substrate area; and determining said smallest dimension of the like material in the second substrate area using the determined parameters of the first substrate area.

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