Methods of depositing stable and hermetic ashable hardmask...

Details Methods of depositing stable and hermetic ashable hardmask... Methods of depositing stable and hermetic ashable hardmask...

2011-07-19

2011-07-19

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

Reexamination Certificate

active

07981777

ABSTRACT:
The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.

REFERENCES:
patent: 4668261 (1987-05-01), Chatzipetros et al.
patent: 4863493 (1989-09-01), Kotani et al.
patent: 4863760 (1989-09-01), Schantz et al.
patent: 5231057 (1993-07-01), Doki et al.
patent: 5261250 (1993-11-01), Missimer
patent: 5378316 (1995-01-01), Franke et al.
patent: 5470661 (1995-11-01), Bailey et al.
patent: 6030591 (2000-02-01), Tom et al.
patent: 6035803 (2000-03-01), Robles et al.
patent: 6066209 (2000-05-01), Sajoto et al.
patent: 6150719 (2000-11-01), Saia et al.
patent: 6241793 (2001-06-01), Lee et al.
patent: 6286321 (2001-09-01), Glater
patent: 6319299 (2001-11-01), Shih et al.
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6617553 (2003-09-01), Ho et al.
patent: 6967072 (2005-11-01), Latchford et al.
patent: 7223526 (2007-05-01), Fairbairn et al.
patent: 7314506 (2008-01-01), Vininski et al.
patent: 7323401 (2008-01-01), Ramaswamy et al.
patent: 7371461 (2008-05-01), Fuller et al.
patent: 7381644 (2008-06-01), Subramonium et al.
patent: 2001/0021491 (2001-09-01), Chen et al.
patent: 2002/0182848 (2002-12-01), Joseph et al.
patent: 2003/0044532 (2003-03-01), Lee et al.
patent: 2004/0016972 (2004-01-01), Singh et al.
patent: 2004/0018750 (2004-01-01), Sophie et al.
patent: 2004/0023502 (2004-02-01), Tzou et al.
patent: 2004/0140506 (2004-07-01), Singh et al.
patent: 2004/0180551 (2004-09-01), Biles et al.
patent: 2004/0224504 (2004-11-01), Gadgil
patent: 2004/0266195 (2004-12-01), Dokumaci et al.
patent: 2005/0042889 (2005-02-01), Lee et al.
patent: 2005/0098119 (2005-05-01), Burger et al.
patent: 2005/0112506 (2005-05-01), Czech et al.
patent: 2006/0091559 (2006-05-01), Nguyen et al.
patent: 2006/0154086 (2006-07-01), Fuller et al.
patent: 2006/0197881 (2006-09-01), Kang et al.
patent: 2006/0205223 (2006-09-01), Smayling
patent: 2007/0048674 (2007-03-01), Wells
patent: 2007/0059913 (2007-03-01), King et al.
patent: 2007/0125762 (2007-06-01), Cui et al.
patent: 2007/0128538 (2007-06-01), Fairbairn et al.
patent: 2007/0166546 (2007-07-01), Ichikawa et al.
patent: 2007/0166979 (2007-07-01), Wang et al.
patent: 2007/0247073 (2007-10-01), Paterson et al.
patent: 2008/0128907 (2008-06-01), Yang et al.
patent: 2008/0242912 (2008-10-01), Letessier et al.
patent: 2008/0254641 (2008-10-01), Kobayashi et al.
patent: 2009/0182180 (2009-07-01), Huang et al.
patent: WO 2005/048367 (2004-11-01), None
U.S. Office Action mailed Dec. 14, 2006, from U.S. Appl. No. 11/318,269.
Subramonium et al., “Pulsed PECVD Method for Modulating Hydrogen Content in Hard Mask”, U.S. Appl. No. 11/318,269, filed Dec. 23, 2005.
Ikeda et al., “Top-PECVD”: A New Conformal Plasma Enhanced CVD Technology using TEOS, Ozone and Pulse-modulated RF Plasma, 1992 IEEE, pp. 11.2.1-11.2.4.
Subramonium et al., “Methods of Depositing Highly Selective Transparent Ashable Hardmask Films,” Novellus Systems, Inc., U.S. Appl. No. 11/449,983, filed Jun. 8, 2006, pp. 1-21.
Fang et al., “Methods of Improving Ashable Hardmask Adhesion to Metal layers,” Novellus Systems, Inc., U.S. Appl. No. 11/612,382, filed Dec. 18, 2006.
U.S. Office Action mailed Oct. 9, 2007, from U.S. Appl. No. 11/612,382.
Grill, et al. “Diamondlike carbon films by rf plasma-assisted chemical vapor deposition from acetylene,” IBM J. Res. Develop., vol. 34, No. 6, Nov. 1990, pp. 849-857.
Callegari et al., “Optical properties of hydrogenated amorphous-carbon film for attenuated phase-shift mask applications,” J.Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2697-2699.
Grill, A., “Diamond-like carbon: state of the art,” Diamond and Related Mateials 8 (1999) 428-434.
Grill, A., “Plasma-deposited diamondlike carbon and related materials,” IBM Journal of Research and Development, vol. 43, ½, 1999, http://research.ibm.com/journal/rd/431/grill.html. 14 pages.
Kragler et al., “Scanning tunneling microscopy based lithography employing amorphous hydrogenated carbon as a high resolution resist mask,” Appl. Phys. Lett. 67 (8), Aug. 21, 1995, pp. 1163-1165.
U.S. Office Action mailed Dec. 27, 2007, from U.S. Appl. No. 11/449,983.
Subramonium et al., “Pulsed PECVD Method for Modulating Hydrogen Content in Hard Mask,” Novellus Systems, Inc., U.S. Appl. No. 12/048,967, filed Mar. 14, 2008.
Subramonium et al., “Methods and Apparatus for Plasma-Based Deposition,” Novellus Systems, Inc., U.S. Appl. No. 11/849,208, filed Aug. 31, 2007.
Notice of Allowance and Fee Due mailed May 7, 2007 from U.S. Appl. No. 11/318,269.
Allowed Claims from U.S. Appl. No. 11/318,269.
U.S. Office Action mailed Jul. 9, 2008, from U.S. Appl. No. 11/449,983.
U.S. Final Office Action mailed May 13, 2008, from U.S. Appl. No. 11/612,382.
U.S. Office Action mailed Aug. 19, 2008, from U.S. Appl. No. 11/612,382.
Subramonium et al., “Methods of Depositing Smooth and Conformal Ashable Hard Mask Films,” Novellus Systems, Inc., U.S. Appl. No. 12/163,670, filed Jun. 27, 2008.
Hsu et al., “Method for Purifying Acetylene Gas for Use In Semiconductor Processes,” Novellus Systems, Inc., U.S. Appl. No. 12/133,223, filed Jun. 4, 2008.
U.S. Office Action mailed Jan. 5, 2009, from U.S. Appl. No. 11/449,983.
Henri, et al., Method for Improved Thickness Repeatability of PECVD Deposited Carbon Films, Novellus Systems, Inc., U.S. Appl. No. 12/334,220, filed Dec. 12, 2008.
U.S. Office Action mailed Feb. 24, 2009, from U.S. Appl. No. 11/612,382.
U.S. Appl. No. 11/612,382, Office Action mailed Feb. 24, 2009.
U.S. Appl. No. 11/612,382, Final Office Action mailed May 12, 2009.
U.S. Appl. No. 12/133,223, Office Action mailed Aug. 19, 2009.
U.S. Appl. No. 11/449,983, Office Action mailed Sep. 15, 2009.
U.S. Appl. No. 11/710,652, Office Action mailed Nov. 20, 2009.
U.S. Appl. No. 11/612,382, Office Action mailed Dec. 9, 2009.
U.S. Appl. No. 12/133,223, Office Action mailed Dec. 21, 2009.
U.S. Appl. No. 12/133,223, Notice of Allowance mailed Mar. 2, 2010.
U.S. Appl. No. 12/133,223, Allowed Claims.
U.S. Appl. No. 11/612,382, Office Action mailed Mar. 26, 2010.
U.S. Appl. No. 12/766,721, “Methods For Forming Conductive Carbon Films By PECVD”, Fox et al., filed Apr. 23, 2010.
U.S. Appl. No. 12/786,842, “Method for purifying acetylene gas for use in semiconductor processes”, Hsu et al., filed May 25, 2010.
U.S. Appl. No. 11/449,983, Office Action mailed Jun. 21, 2010.
Korean Office Action mailed Jun. 1, 2010 for Application No. 2009-0048358.

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