Methods of chemical-mechanical polishing insulating inorganic me

Details Methods of chemical-mechanical polishing insulating inorganic me Methods of chemical-mechanical polishing insulating inorganic me

1993-04-29

1994-06-07

Bell, Mark L.

Fishing, trapping, and vermin destroying

51293, 51295, 51309, 106 3, 437228, H01L 2160

Patent

active

053189272

ABSTRACT:
Chemical-mechanical polishing methods are disclosed for removing insulating inorganic metal oxide materials from semiconductor wafers. Such utilize aqueous acids or base slurries having a pK ionization constant of less than or equal to 5.0. Alternately, aqueous slurries having an oxidizing agent with an E.degree. reduction potential of greater than or equal to 1.0 volt are utilized. Further alternatively, non-aqueous slurries having a liquid halogenated or pseudohalogenated reactant are utilized. Further, slurries having an organic ligand precursor are utilized.

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