Methods of bridging lateral nanowires and device using same

Details Methods of bridging lateral nanowires and device using same Methods of bridging lateral nanowires and device using same

2007-04-24

2007-04-24

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S041000, C117S002000, C117S084000, C977S721000, C977S742000

Reexamination Certificate

active

10738176

ABSTRACT:
A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

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