Methods involving resetting spin-torque magnetic random...

Details Methods involving resetting spin-torque magnetic random... Methods involving resetting spin-torque magnetic random...

2008-05-09

2009-02-17

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

07492631

ABSTRACT:
An exemplary method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a conductor, wherein the first current is operative to change a direction of orientation of a magnetic reference layer, inducing a second current from the drain terminal to the write terminal via a conductive layer, wherein the second current is operative to change the direction of a magnetic state of a free layer magnet, and inducing a third current through the conductor, wherein the third current is operative to change the direction of magnetic orientation of the reference layer.

REFERENCES:
patent: 7110284 (2006-09-01), Hayakawa et al.
patent: 7190611 (2007-03-01), Nguyen et al.

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