Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-17
2006-01-17
Cuneo, Kamand (Department: 2841)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S784000, C257S778000, C438S127000, C174S050510
Reexamination Certificate
active
06987058
ABSTRACT:
A semiconductor assembly includes at least one semiconductor die and a carrier substrate adhered and maintained in spaced-apart relation to one another by at least one adhesive element. Through an opening in the carrier substrate, the assembly has intermediate conductive elements extending between bond pads of the semiconductor die and contact pads of the carrier substrate. The carrier substrate has a dam formed around the contact pads. A dielectric filler material disposed between the semiconductor die and the carrier substrate at least partially fills the opening, is laterally contained by the dam, and encapsulates the intermediate conductive elements, as well as at least filling the space between the semiconductor die and carrier substrate and forming a fillet about the periphery of the semiconductor die.
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Bui Hung S.
Cuneo Kamand
Micro)n Technology, Inc.
TraskBritt
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