Methods for substrate orientation

Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate

Reexamination Certificate

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C216S079000, C438S742000, C438S743000, C430S318000

Reexamination Certificate

active

07077973

ABSTRACT:
Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle in a first orientation on a reticle support in a processing chamber, wherein the reticle comprises a metal photomask layer formed on an optically transparent substrate, and a patterned resist material deposited on the metal photomask layer, etching the metal photomask layer in the first orientation, positioning the reticle in at least a second orientation, and etching the metal photomask layer in the at least second orientation.

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