Methods for simultaneously forming doped regions having...

Details Methods for simultaneously forming doped regions having... Methods for simultaneously forming doped regions having...

2008-12-29

2010-10-26

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S307000, C438S513000, C257SE21077, C257SE21084, C257SE21135, C257SE21141, C257SE21154, C257SE21158, C257SE21324, C257SE21329

Reexamination Certificate

active

07820532

ABSTRACT:
Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.

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