Methods for silicon electrode assembly etch rate and etch...

Abrading – Abrading process – Combined abrading

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C451S037000, C451S028000

Reexamination Certificate

active

07442114

ABSTRACT:
Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

REFERENCES:
patent: 5622875 (1997-04-01), Lawrence
patent: 6004400 (1999-12-01), Bishop et al.
patent: 6276997 (2001-08-01), Li
patent: 6376385 (2002-04-01), Lilleland et al.
patent: 6399499 (2002-06-01), Lee
patent: 6761625 (2004-07-01), Rojhantalab et al.
patent: 6810887 (2004-11-01), Tan
patent: 6897161 (2005-05-01), Suzuki
patent: 2002/0086539 (2002-07-01), Falster
patent: 2002/0107158 (2002-08-01), Peters et al.
patent: 2003/0150476 (2003-08-01), Suzuki
patent: 2003/0221702 (2003-12-01), Peebles
patent: 2004/0003828 (2004-01-01), Jackson
H. Robbins and B. Schwartz, “Chemical Etching of Silicon: I. The System HF, HNO3, and H2O,” Journal of the Electrochemical Society, vol. 106, No. 6, (Jun. 1959) 505-508.
B. Schwartz and H. Robbins, “Chemical Etching of Silicon: III. A Temperature Study in the Acid System,” Journal of the Electrochemical Society, vol. 108, No. 4, (Apr. 1961) 365-372.
H.J. Lewerenz and M. Aggour, “On the origin of photocurrent oscillation at Si electrodes,” J. Electroanal. Chem., 351 (1993) 159-168.
Xiaoge Gregory Zhang,Electrochemistry of silicon and its oxide, Kluwer Academic/Plenum Publishers, New York, 2001.
International Preliminary Report on Patentability dated Jul. 10, 2007 and Written Opinion of the International Searching Authority dated Jun. 13, 2007 for PCT/US2005/045361.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods for silicon electrode assembly etch rate and etch... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for silicon electrode assembly etch rate and etch..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for silicon electrode assembly etch rate and etch... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4010540

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.