Methods for selective removal of material from wafer...

Details Methods for selective removal of material from wafer... Methods for selective removal of material from wafer...

2007-07-17

2007-07-17

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S692000, C134S001100

Reexamination Certificate

active

10647634

ABSTRACT:
A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.

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Patent Abstracts of Japan for 09-027482 published Jan. 1997.

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