Methods for selective plasma etch

Details Methods for selective plasma etch Methods for selective plasma etch

1997-08-28

2000-07-18

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

438724, C03C 1500

Patent

active

06090304&

ABSTRACT:
Disclosed is a method for improving the selectivity of dielectric layers to photoresist layers and base layers. The method is performed in a plasma processing chamber, and the photoresist layer is coated over the dielectric layer. The method includes introducing an etchant source gas into the plasma processing chamber, which consists essentially of a CxFy gas and an N.sub.2 gas. The method further includes striking a plasma in the plasma processing chamber from the etchant source gas. The method additionally includes etching at least a portion of the dielectric layer with the plasma through to a base layer that underlies the dielectric layer. The method is also well suited for anisotropically etching an oxide layer with very high selectivities to Si, Si.sub.3 N.sub.4, TiN, and metal silicides.

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